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| TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices 2N2369A 2N2369AU 2N2369AUA 2N2369AUB Qualified Level 2N4449 2N4449U 2N4449UA 2N4449UB JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Symbol VCEO VEBO VCBO VCES All UB 20 6.0 All others 15 4.5 Unit Vdc Vdc Vdc Vdc W W 40 40 @ TA = +250C @ TC = +250C Total Power Dissipation 2N2369A; 2N4449 0.50(1) 1.2(2) (5) All UA 0.50 1.2(2) PT (6) All UB 0.40 1.4(7) (3) All U 0.60 1.5(4) Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 TO-18* (TO-206AA) 2N2369A 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 2N2369A; 2N4449 All UA All UB All U Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 All UA All UB All U 1) Derate linearly 3.08 mW/0C above TA = +37.50C 2) Derate linearly 6.85 mW/0C above TC = +250C 3) Derate linearly 3.44 mW/0C above TA = +63.50C 4) Derate linearly 8.55 mW/0C above TC = +63.50C TO-46 (TO-206AB) 2N4449 Symbol Max. 146 125 135 117 325 350 437 291 0 Unit RJC C/mW SURFACE MOUNT UA* RJA 0 C/mW SURFACE MOUNT UB* 5) Derate linearly 2.86 mW/0C above TC = +63.50C 6) Derate linearly 2.29 mW/0C above TC = +63.50C 7) Derate linearly 8.00 mW/0C above TC = +63.50C SURFACE MOUNT U* *See appendix A for package outline 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2369A; UA; UB; U; 2N4449; UA; UB; U JAN SERIES ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICES Min. 15 0.4 10 0.25 10 0.2 Adc Max. Unit Vdc Adc Adc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Current VCE = 20 Vdc Emitter-Base Breakdown Voltage VEB = 4.5 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc Collector-Base Breakdown Voltage VCB = 40 Vdc Collector-Base Cutoff Current VCB = 32 Vdc IEBO ICBO ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 10 mAdc, VCE = 0.35 Vdc IC = 30 mAdc, VCE = 0.4 Vdc IC = 10 mAdc, VCE = 1.0 Vdc IC = 100 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 30 mAdc, IB = 3.0 mAdc IC = 100 mAdc, IB = 10 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 30 mAdc, IB = 3.0 mAdc IC = 100 mAdc, IB = 10 mAdc 40 30 40 20 120 120 120 120 0.20 0.25 0.45 0.70 0.80 0.85 0.90 1.20 hFE VCE(sat) Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz Output Capacitance VCB = 5.0 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz (1)Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. hfe Cobo Cibo 5.0 10 4.0 5.0 pF pF SWITCHING CHARACTERISTICS Turn-On Time IC = 10 mAdc; IB1= 3.0 mAdc, IB2 = 1.5 mAdc Turn-Off Time IC = 10 mAdc; IB1 = 3.0 mAdc, IB2 = 1.5 mAdc Charge Storage Time IC = 10 mAdc; IB1 = 10 mAdc, IB2 = 10 mAdc t on 12 18 13 s s s t off t s 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 |
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